We report effective methods for improving light extraction efficiency for n-side-up vertical InGaN light-emitting diodes(LEDs). For the LEDs with high reflectance Ag-based p-contacts, nanotexturing of the n-GaN surface using a combination of photonic crystals and photochemical etching drastically enhances the efficiency of extraction from the top surface. In contrast, the LEDs with low reflectance Au-based p-contacts show significantly less improvement through the nanotexturing. These experimental results indicate the critical role of high reflectance p-contacts as well as surface texturing in improving the light extraction efficiency of the vertical LEDs for solid-state lighting. © 2010 IOP Publishing Ltd.
CITATION STYLE
Jang, H. W., Ryu, S. W., Yu, H. K., Lee, S., & Lee, J. L. (2010). The role of reflective p-contacts in the enhancement of light extraction in nanotextured vertical InGaN light-emitting diodes. Nanotechnology, 21(2). https://doi.org/10.1088/0957-4484/21/2/025203
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