The Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser Diodes

  • Nakamura S
  • 302

    Readers

    Mendeley users who have this article in their library.
  • 1.4k

    Citations

    Citations of this article.

Abstract

REVIEW High-efficiency light-emitting diodes emitting amber, green, blue, and ultraviolet light have been obtained through the use of an InGaN active layer instead of a GaN active layer. The localized energy states caused by In composition fluctuation in the InGaN active layer are related to the high efficiency of the InGaN-based emitting devices. The blue and green InGaN quantum-well structure light-emitting diodes with luminous efficiencies of 5 and 30 lumens per watt, respectively, can be made despite the large number of threading dislocations (1 x 10(8) to 1 x 10(12) cm-2). Epitaxially laterally overgrown GaN on sapphire reduces the number of threading dislocations originating from the interface of the GaN epilayer with the sapphire substrate. InGaN multi-quantum-well structure laser diodes formed on the GaN layer above the SiO2 mask area can have a lifetime of more than 10,000 hours. Dislocations increase the threshold current density of the laser diodes.

Get free article suggestions today

Mendeley saves you time finding and organizing research

Sign up here
Already have an account ?Sign in

Find this document

Authors

  • S. Nakamura

Cite this document

Choose a citation style from the tabs below

Save time finding and organizing research with Mendeley

Sign up for free