Room temperature negative differential resistance in nanoscale molecular junctions

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Abstract

Molecular devices utilizing active self-assembled monolayer (SAM) (containing nitroamine (2′-amino-4-ethynylphenyl-4′-ethynylphenyl-5′ -nitro-1-benzenethiolate) and nitro (4-ethynylphenyl-4′-ethynylphenyl-2′-nitro-1-benzenethiolate) redox center) as the active component are reported. Current-voltage measurements of the devices exhibited negative differential resistance at room temperature and an on-off peak-to-valley ratio in excess of 1000:1 at low temperature.

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Chen, J., Wang, W., Reed, M. A., Rawlett, A. M., Price, D. W., & Tour, J. M. (2001). Room temperature negative differential resistance in nanoscale molecular junctions. Materials Research Society Symposium - Proceedings, 582, H321–H325. https://doi.org/10.1063/1.1289650

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