Schottky Barrier Heights and the Continuum of Gap States

  • Tersoff J
  • Laboratories A
  • Hill M
  • 100


    Mendeley users who have this article in their library.
  • N/A


    Citations of this article.


Simple physical considerations of local charge neutrality suggest that near a metal-semiconductor interface, the Fermi level in the semiconductor is pinned near an effective gap center, which is simply related to the bulk semiconductor band structure. In this way "canonical" Schottky barrier heights are calculated for several semiconductors. These are in excellent agreement with experiment for interfaces with a variety of metals.

Get free article suggestions today

Mendeley saves you time finding and organizing research

Sign up here
Already have an account ?Sign in

Find this document


  • J. Tersoff

  • a T T Bell Laboratories

  • Murray Hill

Cite this document

Choose a citation style from the tabs below

Save time finding and organizing research with Mendeley

Sign up for free