In this letter we report the fabrication and characterization of Schottky barrier photodetectors on p-type GaN films. Theve films were grown over basal plane sapphire substrates using low pressure metalorganic chemical vapor deposition and magnesium as the p-type dopant. The current-voltage and capacitance-voltage characteristics were measured for Ti/Au Schottky barriers for a film with a p doping of 7 x lOi cmm3. We measured a 1.5 V forward turn on and a 3 V reverse breakdown. The zero bias responsivity of a detector with 1 mm” area was measured to be 0.13 ANir. For these photovoltaic detectors, the photoresponse was nearly constant from 200 to 365 rml and fell sharply by several orders of magnitude for wavelengths above 365 nm.
Mendeley saves you time finding and organizing research
Choose a citation style from the tabs below