SEE Characterization of Vertical DMOSFETs: An Updated Test Protocol

  • Titus J
  • Wheatley C
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Abstract

The test protocols for power MOSFETs used in the manufacturer's specification sheets are inadequate in that they do not represent a realistic worst-case condition. In addition, the applicable single-event effects (SEE) test methods and guidelines do not provide sufficient details to the user as to what conditions should be used, placing an undue burden on them. This paper addresses several of these deficiencies and others. We present a new test protocol; we suggest a new approach to describe the SEE response; and we provide a model to predict critical ion energies that should produce a worst-case response.

Author-supplied keywords

  • 30 to 1000 V
  • Critical ion energy, energy response
  • Ion energy model
  • MOSFETs
  • Penetration depth
  • Single-event burnout (SEB)
  • Single-event gate rupture (SEGR)
  • Worst-case criteria

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Authors

  • Jeffrey L. Titus

  • C. Frank Wheatley

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