Self-assembled growth of epitaxial erbium disilicide nanowires on silicon (001)

  • Chen Y
  • Ohlberg D
  • Medeiros-Ribeiro G
 et al. 
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Abstract

Sub-monolayer amounts of Er deposited onto Si(001) react with the
substrate to form epitaxial nanowires of crystalline ErSi2. The growth
of uniaxial structures occurs because the different crystal structures
of ErSi2 and Si have a good lattice match along one Si crystallographic
axis but a significant mismatch along the perpendicular Si axis.
The nucleation, growth, and subsequent evolution of ErSi2 nanowires
were investigated as functions of erbium coverage on the Si (001)
surface, annealing time, and annealing temperature. Low annealing
temperatures (620 degreesC) and times (5 min) produced ErSi2 nanowires
with widths of a few nanometers, heights less than one nanometer,
and lengths of several hundred nanometers. For longer annealing times
at low temperature, the surface roughened without significant ripening
of the wires. Annealing at intermediate temperatures (similar to
700 degreesC) caused stacking faults to form along the long axis
of the nanowires and their lengths to ripen. At high temperature
(800 degreesC), the wires broke apart into short segments with stacking
faults.

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Authors

  • Yong Chen

  • Douglas A.A. Ohlberg

  • Gilberto Medeiros-Ribeiro

  • Y. Austin Chang

  • R. Stanley Williams

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