Semipolar GaN films on patterned r-plane sapphire obtained by wet chemical etching

  • de Mierry P
  • Kriouche N
  • Nemoz M
 et al. 
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Abstract

It is shown that (11 (2) over bar2)-oriented GaN films can be achieved from r-sapphire patterned by chemical etching. Growth first occurs selectively from the inclined c-facet of sapphire, leading finally to a fully coalesced layer with (11 (2) over bar2) orientation. The structural and optical quality of these layers was assessed by x-ray diffraction, cathodoluminescence and photoluminescence measurements. The results clearly show that the quality of (11 (2) over bar2) GaN on patterned r-sapphire is markedly improved in comparison with (11 (2) over bar2) GaN on m-sapphire. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3454278]

Author-supplied keywords

  • GaN
  • semipolar

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Authors

  • P. de Mierry

  • N. Kriouche

  • M. Nemoz

  • S. Chenot

  • G. Nataf

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