This paper presents 2D numerical simulation results allowing to define the sensitive volume and triggering criteria of SEB for VDMOS of classic planar-type technology. The results analysis permits besides to better understand the SEB mechanism. © 2009 IEEE.
CITATION STYLE
Luu, A., Austin, P., Miller, F., Buard, N., Carriére, T., Poirot, P., … Sarrabayrouse, G. (2009). Sensitive volume and triggering criteria of SEB in classic planar VDMOS. In Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS (pp. 552–558). https://doi.org/10.1109/RADECS.2009.5994713
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