Sensitive volume and triggering criteria of SEB in classic planar VDMOS

  • Luu A
  • Austin P
  • Miller F
 et al. 
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Abstract

This paper presents 2-D numerical simulation results which allow the definition of the sensitive volume and triggering criteria of SEBs for VDMOS in classic planar-type technology. The results analysis allows for a better understanding of the SEB mechanism.

Author-supplied keywords

  • SEB
  • TCAD simulations
  • power MOSFETs
  • sensitive volume
  • triggering criteria

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Authors

  • A. Luu

  • P. Austin

  • F. Miller

  • N. Buard

  • T. Carriére

  • P. Poirot

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