Simulated effects of proton and ion beam irradiation on titanium dioxide memristors

  • Vujisic M
  • Stankovic K
  • Marjanovic N
 et al. 
  • 20


    Mendeley users who have this article in their library.
  • 31


    Citations of this article.


Effects of titanium dioxide memristor exposure to proton and ion beams are investigated. A memristor model assuming ohmic electronic conduction and linear ionic drift is used for the analysis. Simulations of particle transport suggest that radiation induced oxygen ion/oxygen vacancy pairs can influence the device's operation by lowering both the mobility of the vacancies and the resistance of the stoichiometric oxide region. These radiation induced changes affect the current-voltage characteristic and state retention ability of the memristor.

Author-supplied keywords

  • Ions
  • Memristor
  • Monte Carlo method
  • protons
  • titanium dioxide

Get free article suggestions today

Mendeley saves you time finding and organizing research

Sign up here
Already have an account ?Sign in

Find this document


  • Milos Vujisic

  • Koviljka Stankovic

  • Nada Marjanovic

  • Predrag Osmokrovic

Cite this document

Choose a citation style from the tabs below

Save time finding and organizing research with Mendeley

Sign up for free