The combination of efficient light emission and high charge-carrier mobility has thus far proved elusive for polymer semiconductors, with high mobility typically achieved by cofacial π-electron system to π-electron system interactions that quench exciton luminescence1,2 . We report a new strategy, comprising the introduction of a limited number of more effective hopping sites between otherwise relatively isolated, and thus highly luminescent, polyfluorene chains. Our approach results in polymer films with large mobility (µ ≈ 3–6 × 10−2 cm2 V−1 s−1 ) and simultaneously excellent light-emission characteristics. These materials are expected to be of interest for light-emitting transistors3 , light-emitting diode sources for optical communications4 and may offer renewed hope for electrically pumped laser action2,5,6 . In the last context, optically pumped distributed feedback lasers comprising one-dimensional etched silica grating structures coated with polymer have state-of-the-art excitation thresholds (as low as 30Wcm−2 (0.1 nJ per pulse or 0.3µJcm−2 ) for 10 Hz, 12 ns, 390nmexcitation) and slope efficiencies (up to 11%).
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