Single-crystal gallium arsenide on insulating substrates

  • Manasevit H
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Abstract

Chemical vapor deposition has been been used successfully for the attainment of a single‐crystal growth of gallium arsenide directly on a number of single‐crystal insulating oxide substrates. Several orientation relationships have been determined for GaAs grown on sapphire (α‐Al2O3), spinel (MgAl2O4), beryllium oxide (BeO), and thorium oxide (ThO2).

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Authors

  • Harold M. Manasevit

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