Single-crystal gallium arsenide on insulating substrates

Abstract

Chemical vapor deposition has been been used successfully for the attainment of a single-crystal growth of gallium arsenide directly on a number of single-crystal insulating oxide substrates. Several orientation relationships have been determined for GaAs grown on sapphire (α-Al2O 3), spinel (MgAl2O4), beryllium oxide (BeO), and thorium oxide (ThO2). © 1968 The American Institute of Physics.