Single-layer MoS 2 phototransistors

  • Yin Z
  • Li H
  • Li H
 et al. 
  • 114

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Abstract

A new phototransistor based on the mechanically exfoliated single-layer MoS(2) nanosheet is fabricated, and its light-induced electric properties are investigated in detail. Photocurrent generated from the phototransistor is solely determined by the illuminated optical power at a constant drain or gate voltage. The switching behavior of photocurrent generation and annihilation can be completely finished within ca. 50 ms, and it shows good stability. Especially, the single-layer MoS(2) phototransistor exhibits a better photoresponsivity as compared with the graphene-based device. The unique characteristics of incident-light control, prompt photoswitching, and good photoresponsivity from the MoS(2) phototransistor pave an avenue to develop the single-layer semiconducting materials for multifunctional optoelectronic device applications in the future.

Author-supplied keywords

  • MoS 2
  • photocurrent
  • photoresponsivity
  • photoswitching
  • phototransistors
  • single-layer

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Authors

  • Zongyou Yin

  • Hai Li

  • Hong Li

  • Lin Jiang

  • Yumeng Shi

  • Yinghui Sun

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