Solution deposited NiO thin-films as hole transport layers in organic photovoltaics

  • Steirer K
  • Chesin J
  • Widjonarko N
 et al. 
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Abstract

Organic solar cells require suitable anode surface modifiers in order to selectively collect positive charge carriers and improve device performance. We employ a nickel metal organic ink precursor to fabricate NiO hole transport layers on indium tin oxide anodes. This solution deposited NiO annealed at 250 °C and plasma treated, achieves similar OPV device results reported with NiO films from PLD as well as PEDOT:PSS. We demonstrate a tunable work function by post-processing the NiO with an O2-plasma surface treatment of varied power and time. We find that plasma treatment is necessary for optimal device performance. Optimal devices utilizing a solution deposited NiO hole transport layer show lower series resistance and increased fill factor when compared to solar cells with PEDOT:PSS. © 2010 Elsevier B.V. All rights reserved.

Author-supplied keywords

  • Anode surface modifier
  • Hole transport layer
  • NiO
  • Nickel oxide
  • Organic solar cells
  • PEDOT:PSS

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Authors

  • K. Xerxes Steirer

  • Jordan P. Chesin

  • N. Edwin Widjonarko

  • Joseph J. Berry

  • Alex Miedaner

  • David S. Ginley

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