Organic solar cells require suitable anode surface modifiers in order to selectively collect positive charge carriers and improve device performance. We employ a nickel metal organic ink precursor to fabricate NiO hole transport layers on indium tin oxide anodes. This solution deposited NiO annealed at 250 °C and plasma treated, achieves similar OPV device results reported with NiO films from PLD as well as PEDOT:PSS. We demonstrate a tunable work function by post-processing the NiO with an O2-plasma surface treatment of varied power and time. We find that plasma treatment is necessary for optimal device performance. Optimal devices utilizing a solution deposited NiO hole transport layer show lower series resistance and increased fill factor when compared to solar cells with PEDOT:PSS. © 2010 Elsevier B.V. All rights reserved.
CITATION STYLE
Steirer, K. X., Chesin, J. P., Widjonarko, N. E., Berry, J. J., Miedaner, A., Ginley, D. S., & Olson, D. C. (2010). Solution deposited NiO thin-films as hole transport layers in organic photovoltaics. Organic Electronics, 11(8), 1414–1418. https://doi.org/10.1016/j.orgel.2010.05.008
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