We demonstrated solution-processed C60 thin-film transistors with high electron mobility. C60 solutions in various organic solvents were dried in a vacuum chamber to obtain uniform thin films. While C60 solution dried under atmospheric pressure produced a large number of crystals, vacuum-dried C60 solution provided flat and uniform thin films of sufficiently high quality to fabricate thin-film transistors. In spite of amorphous-like thin-film formation, C60 transistors showed strang solvent dependence. High performance C60 thin-film transistors with field-effect mobility of 0.86 cm2V-1s-1, threshold voltage of 1.5 V, subthreshold slope of 0.67 V/decade and a current on/off ratio of 3.9×10^6 were obtained from 1,2,4-trichlorobenzene C60 solution.
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