Spontaneous formation of InGaN nanowall network directly on Si

  • Soto Rodriguez P
  • Kumar P
  • Gómez V
 et al. 
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Abstract

We present the study on epitaxial growth of an InGaN nanowall network directly on Si by plasma-assisted molecular beam epitaxy. Scanning electron microscopy, high-resolution X-ray diffraction, and transmission electron microscopy together with energy-dispersive X-ray analysis infer the crystalline nature of the InGaN nanowall network, oriented along the C-axis, with In composition ranging from pure GaN to 40%. Room temperature photoluminescence is observed, indicating good optical quality. The nanowall network is highly in-plane electrically conductive.

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