Stable ZnO thin film transistors by fast open air atomic layer deposition

  • Levy D
  • Freeman D
  • Nelson S
 et al. 
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Abstract

We report stable, high performance zinc oxide thin film transistors
grown by an atmospheric pressure atomic layer deposition system. With
all deposition and processing steps kept at or below 200 {\deg}C, the
alumina gate dielectric shows low leakage (below 10^{-8}
A/cm^{2}) and high breakdown fields. Zinc oxide thin film
transistors in a bottom gate geometry yield on/off ratios above
10^{8}, near zero turn-on voltage, little or no hysteresis, and
mobility greater than 10 cm^{2}/V s. With alumina passivation,
shifts in threshold voltage under gate bias stress compare favorably to
those reported in the literature.

Author-supplied keywords

  • Field effect devices
  • II-VI semiconductors
  • Passivation
  • Vacuum deposition

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Authors

  • D.~H. Levy

  • D Freeman

  • S.~F. Nelson

  • P.~J. Cowdery-Corvan

  • L.~M. Irving

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