Stable ZnO thin film transistors by fast open air atomic layer deposition

  • Levy D
  • Freeman D
  • Nelson S
 et al. 
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We report stable, high performance zinc oxide thin film transistors
grown by an atmospheric pressure atomic layer deposition system. With
all deposition and processing steps kept at or below 200 {\deg}C, the
alumina gate dielectric shows low leakage (below 10^{-8}
A/cm^{2}) and high breakdown fields. Zinc oxide thin film
transistors in a bottom gate geometry yield on/off ratios above
10^{8}, near zero turn-on voltage, little or no hysteresis, and
mobility greater than 10 cm^{2}/V s. With alumina passivation,
shifts in threshold voltage under gate bias stress compare favorably to
those reported in the literature.

Author-supplied keywords

  • Field effect devices
  • II-VI semiconductors
  • Passivation
  • Vacuum deposition

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  • D.~H. Levy

  • D Freeman

  • S.~F. Nelson

  • P.~J. Cowdery-Corvan

  • L.~M. Irving

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