Statistical analysis of SRAM cell stability

  • Agarwal K
  • Nassif S
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The impact of process variation on SRAM yield has become a serious concern in scaled technologies. In this paper, we propose a methodology to analyze the stability of an SRAM cell in the presence of random fluctuations in the device parameters. We provide a theoretical framework for characterizing the DC noise margin of a memory cell and develop models for estimating the cell failure probabilities during read and write operations. The proposed models are verified against extensive Monte-Carlo simulations and are shown to match well over the entire range of the distributions well beyond the 3-sigma extremes

Author-supplied keywords

  • Design
  • Performance
  • Reliability
  • SRAM
  • modeling
  • noise margin
  • reliability
  • stability

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  • K. Agarwal

  • S. Nassif

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