The discrete energy level is not appropriate for free-hole statistics of the heavy Mg doping of GaN. The band model assumes the broad acceptor band centred at 0.20 eV above the valence zone. Its half-width is proportional to the Mg concentration, while the centre of the band remains unaltered. As a consequence, the ionization energy can vary with the compensation, which is not observed under the assumption of the discrete level. The model can explain the Hall constant data and is also in accordance with photoluminescence spectra. It can tentatively also explain the wide spreading of ionization energies in the literature. © 2006 IOP Publishing Ltd.
CITATION STYLE
Šantić, B. (2006). Statistics of the Mg acceptor in GaN in the band model. Semiconductor Science and Technology, 21(10), 1484–1487. https://doi.org/10.1088/0268-1242/21/10/022
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