Straight and helical InGaN core-shell nanowires with a high in core content

  • Cai X
  • Leung Y
  • Cheung K
 et al. 
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Abstract

In1-xGaxN nanowires were fabricated in a tube furnace by chemical vapour deposition, with Ga, In and NH3 as the starting materials and Au as the catalyst. Scanning electron microscopy showed that a mixture of straight and helical In1-xGaxN nanowires was obtained. Transmission electron microscopy (TEM) revealed that both types of nanowire exhibited core-shell structures. The crystal structure of the samples was studied by high resolution TEM and x-ray diffraction, and both cubic and hexagonal phases were found. Energy dispersive x-ray spectroscopy showed that the core had a high In content and the shell had a low In content. The nanowires were also characterized by photoluminescence. The mechanism of formation for the helical nanowires and core-shell structure is discussed.

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