Strains and Stresses in GaN Heteroepitaxy –

  • Dadgar A
  • Clos R
  • Strassburger G
 et al. 
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We present a study of the sources of strain in GaN heteroepitaxy by in- and ex-situ measurement techniques. With an in-situ curvature measurement technique the strain development can be directly correlated to the different layers and doping in simple and device structures. We show several solutions for strain reduction and control. High-quality devices grown on Si are demonstrated.

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  • A Dadgar

  • R Clos

  • G Strassburger

  • F Schulze

  • P Veit

  • T Hempel

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