Strains and Stresses in GaN Heteroepitaxy –

  • Dadgar A
  • Clos R
  • Strassburger G
 et al. 
  • 23

    Readers

    Mendeley users who have this article in their library.
  • N/A

    Citations

    Citations of this article.

Abstract

We present a study of the sources of strain in GaN heteroepitaxy by in- and ex-situ measurement techniques. With an in-situ curvature measurement technique the strain development can be directly correlated to the different layers and doping in simple and device structures. We show several solutions for strain reduction and control. High-quality devices grown on Si are demonstrated.

Get free article suggestions today

Mendeley saves you time finding and organizing research

Sign up here
Already have an account ?Sign in

Find this document

Authors

  • A Dadgar

  • R Clos

  • G Strassburger

  • F Schulze

  • P Veit

  • T Hempel

Cite this document

Choose a citation style from the tabs below

Save time finding and organizing research with Mendeley

Sign up for free