Structural properties of Ne implanted GaN

Abstract

We report a study on the micro-structural changes in GaN due to neon ion implantation using the x-ray diffraction and Raman scattering techniques. An implantation dose of 1014 cm-2 was found unable to produce lattice deformation observable by Raman measurements. For higher doses of implantation several disorder activated Raman scattering centers were observed which corroborate the literature. A new dose dependent feature has been recorded at 1595 cm-1 for higher implantation doses which is suggested to be the vibrational mode of microcavities produced in the lattice. © 2008 The Royal Swedish Academy of Sciences.