Study of latent damage in power MOSFETs caused by heavy ion irradiation

  • Ikeda N
  • Kuboyama S
  • Satoh Y
 et al. 
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Abstract

The latent damages were investigated for Power MOSFETs irradiated by high LET heavy ions. It was demon- strated that the post irradiation leakage current in damaged gate oxide was determined by the initial gate stress after the irradiation and the damage was stable even after a million of gate stress repetition.

Author-supplied keywords

  • Heavy ion
  • Latent damage
  • Power MOSFET

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Authors

  • Naomi Ikeda

  • Satoshi Kuboyama

  • Yohei Satoh

  • Takashi Tamura

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