Study of latent damage in power MOSFETs caused by heavy ion irradiation

  • Ikeda N
  • Kuboyama S
  • Satoh Y
 et al. 
  • 9

    Readers

    Mendeley users who have this article in their library.
  • 13

    Citations

    Citations of this article.

Abstract

The latent damages were investigated for Power MOSFETs irradiated by high LET heavy ions. It was demon- strated that the post irradiation leakage current in damaged gate oxide was determined by the initial gate stress after the irradiation and the damage was stable even after a million of gate stress repetition.

Author-supplied keywords

  • Heavy ion
  • Latent damage
  • Power MOSFET

Get free article suggestions today

Mendeley saves you time finding and organizing research

Sign up here
Already have an account ?Sign in

Find this document

Get full text

Authors

  • Naomi Ikeda

  • Satoshi Kuboyama

  • Yohei Satoh

  • Takashi Tamura

Cite this document

Choose a citation style from the tabs below

Save time finding and organizing research with Mendeley

Sign up for free