Homoepitaxial ZnO layers are grown on Zn-polar (0001) and O-polar (000 (1) over bar) surfaces of single crystal ZnO substrates by plasma assisted molecular beam epitaxy. It is found that the growth conditions to obtain smooth surfaces are significantly different for the two surface polarities. For growth on Zn-polar surface, moderate temperature (650 degrees C) and highly O-rich condition (low Zn/O-2) are required, while high temperature (1000-1050 degrees C) and Zn-rich condition (high Zn/O-2 ratio) are essential for growth on O-polar surfaces. (c) 2006 American Institute of Physics.
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