Symmetrical unified compact model of short-channel double-gate MOSFETs

  • Papathanasiou K
  • Theodorou C
  • Tsormpatzoglou A
 et al. 
  • 16

    Readers

    Mendeley users who have this article in their library.
  • 9

    Citations

    Citations of this article.

Abstract

An explicit charge-based unified compact drain current model for lightly doped or undoped DG MOSFETs is proposed. It takes into account the short-channel effects, the subthreshold slope degradation, the drain-induced barrier lowering and the channel length modulation effects. The model is valid and continuous in all regimes of operation and it has been validated by developing a Verilog-A code and comparing the model results of transfer and output characteristics with simulation results exhibiting an average error of about 3%. The efficient solution of the Lambert W function for the inversion charge and the symmetry of the model make it suitable for circuit simulation and allow fast and accurate simulations of the transistor characteristics. © 2011 Elsevier Ltd. All rights reserved.

Author-supplied keywords

  • Compact model
  • Double-gate MOSFET
  • Symmetrical
  • Unified

Get free article suggestions today

Mendeley saves you time finding and organizing research

Sign up here
Already have an account ?Sign in

Find this document

Authors

Cite this document

Choose a citation style from the tabs below

Save time finding and organizing research with Mendeley

Sign up for free