Synthesis and characterization of Ge2Sb2Te 5 nanowires with memory switching effect

  • Jung Y
  • Lee S
  • Ko D
 et al. 
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Abstract

Ge2Sb2Te5 nanowires (NWs) were synthesized by vaporizing GeTe, Sb, and Te precursors assisted by metal catalysts. Current-voltage measurement of the Ge2Sb2Te5 NW device displays fast and reversible switching between two distinct resistive states, which is due to the crystalline-amorphous phase transition nature of these materials

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Authors

  • Yeonwoong Jung

  • Se Ho Lee

  • Dong Kyun Ko

  • Ritesh Agarwal

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