Synthesis of transfer-free high quality graphene on an arbitrary substrate by metal assisted graphitization with control carbon diffusion process has lot of significance for device applications. Here, we demonstrate the synthesis of monolayer graphene using common triblock co-polymer (EOnPOmEOn) as carbon source by solid phase reaction. In the synthesis process, we used Ni and NiO thin film as catalyst and carbon diffusion barrier, respectively on the top of polymer deposited SiO2/Si substrate. The long carbon chain of triblock co-polymer pluronic F127(EO106PO70EO106) can be graphitized in presence of Ni layer, where carbon diffusion to the top surface is controlled by NiO thin layer. The effects of carbon diffusion, thickness of polymer layer and annealing process are studied to obtain high quality monolayer graphene. Our findings reveal that the NiO/Ni stacked, thickness of polymer layer and reaction process in H2atmosphere strongly influence the quality of synthesized graphene. © 2014 Elsevier B.V.
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