Temperature dependence of inverted tunneling magnetoresistance in MgO-based magnetic tunnel junctions

  • Feng J
  • Feng G
  • Ma Q
 et al. 
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Abstract

MgO-based magnetic tunnel junctions (MTJs) of the following main structure: Ir22Mn78(10 nm) /Co90Fe10(2 nm) /Ru (0.85 nm) /CoFeB (0.5≤t

Author-supplied keywords

  • Magnetic tunnel junction (MTJ)
  • Temperature dependence
  • Tunneling magnetoresistance (TMR)

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