The relative efficiency with respect to Standard Testing Conditions (STC) of ten c-Si PV modules is studied at various illumination levels and operating temperatures. A model proposed recently by a team led by the European Joint Research Centre (JRC) is tested for generic mono- and mc-Si devices with screen-printed cells as well as for three high-efficiency cell designs. Two of the modules are aged. Individual as well as averaged model coefficients are compared to values found in the literature. Theoretical relationships are proposed between the first two model coefficients and I-V curve parameters such as ideality factor and series resistance. The fitted and predicted values agree reasonably well for the tested devices. The different performance of similar module types at intermediate and low irradiances is thus explained with solar cell physics. The derived equations may be useful to PV manufacturers as quantitative guidelines for designing products with superior energy yields.
Mendeley saves you time finding and organizing research
There are no full text links
Choose a citation style from the tabs below