Transistor matching and silicon thickness variation in ETSOI technology

  • Hook T
  • Vinet M
  • Murphy R
 et al. 
  • 40

    Readers

    Mendeley users who have this article in their library.
  • 2

    Citations

    Citations of this article.

Abstract

In this work we examine threshold voltage matching as a function of silicon thickness variation in ETSOI (Extremely Thin Silicon On Insulator) transistors. Analysis of silicon thickness data in terms of threshold voltage and direct experimental measurements of matching lead to several specific observations: that mismatch due to silicon thickness variation is not random and is not therefore to be described by the conventional area dependence; that adjacent transistors are very closely matched; that silicon wafer processing can modulate the variation and therefore the matching.

Get free article suggestions today

Mendeley saves you time finding and organizing research

Sign up here
Already have an account ?Sign in

Find this document

Authors

  • Terence B. Hook

  • Maud Vinet

  • Richard Murphy

  • Shom Ponoth

  • Laurent Grenouillet

Cite this document

Choose a citation style from the tabs below

Save time finding and organizing research with Mendeley

Sign up for free