Transition between ballistic and diffusive heat transport regimes in silicon materials

  • Maldovan M
  • 49

    Readers

    Mendeley users who have this article in their library.
  • 18

    Citations

    Citations of this article.

Abstract

We study the extent of ballistic and diffusive thermal transport and the range of application of the Casimir and Fourier theories in semiconductor materials by using a theoretical model based on the Boltzmann transport equation. We show that combined effects of length scale, temperature, and boundary roughness are responsible for thermal transport transitions in silicon nanowires and thin films. We also introduce a more accurate principle for ballistic transport that considers the balance between internal and surface scattering.Phonon quantum confinement effects as well as the conditions for phonon wave interference in nanoscale heat transport are discussed.

Get free article suggestions today

Mendeley saves you time finding and organizing research

Sign up here
Already have an account ?Sign in

Find this document

Authors

  • Martin Maldovan

Cite this document

Choose a citation style from the tabs below

Save time finding and organizing research with Mendeley

Sign up for free