Transition layers at the SiO[sub 2]∕SiC interface

  • Zheleva T
  • Lelis A
  • Duscher G
 et al. 
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The electrical performance of SiC-based microelectronic devices is strongly affected by the densities of interfacial traps introduced by the chemical and structural changes at the Si O 2 ∕ Si C interface during processing. We analyzed the structure and chemistry of this interface for the thermally grown Si O 2 ∕ 4 H - Si C heterostructure using high-resolution transmission electron microscopy(TEM), Z -contrast scanning TEM, and spatially resolved electron energy-loss spectroscopy. The analyses revealed the presence of distinct layers, several nanometers thick, on each side of the interface; additionally, partial amorphization of the top SiCsurface was observed. These interfacial layers were attributed to the formation of a ternary Si–C–O phase during thermal oxidation.

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  • Tsvetanka Zheleva

  • Aivars Lelis

  • Gerd Duscher

  • Fude Liu

  • Igor Levin

  • Mrinal Das

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