Trap elimination and injection switching at organic field effect transistor by inserting an alkane (C44H90) layer

  • Ogawa S
  • Kimura Y
  • Niwano M
 et al. 
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Abstract

Recently, it was proposed in the literature that the electron trap
on a hydroxyl-containing dielectric interface of an organic field
effect transistor (OFET) hinders its n type operation. The authors
fabricated pentacene and fullerene OFETs with a hydroxyl-free insulating
material, a long-chain alkane, i.e., tetratetracontate (TTC), C44H90
layer coated on the SiO2 dielectric layer. The displacement current
measurements clearly demonstrated that the electron trap of the SiO2
surface is suppressed by the TTC layer. For a pentacene FET with
an Al electrode and SiO2 dielectric layer, a p type operation was
observed, while the operation mode was switched to the n type by
the insertion of TTC on the SiO2 interface. By simple patterning
of the TTC layer to produce a bipolar injection, the authors fabricated
an ambipolar pentacene FET with a single kind of metal electrode.
Thus TTC is a good material for the surface modification of a dielectric
layer in OFETs. (c) 2007 American Institute of Physics.

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