Vertical electrochemical transistor based on poly(3-hexylthiophene) and cyanoethylpullulan

Abstract

We have fabricated an all-solid state and vertical electrochemical transistor, which employs poly(3-hexylthiophene) and cyanoethylpullulan as the semiconducting layer and solid electrolyte, respectively. The device has the same structure as a vertical field effect transistor, but can function using a different mechanism of operation in which the doping and dedoping to polythiophene are controlled by the gate voltage and the source-drain current is modulated by the doping-dedoping process. The transistor behaves like p-channel accumulation-mode devices and has a switching speed of 50 Hz in vacuum. © 2004 American Institute of Physics.