Visible band-gap ZnCdO heterostructures grown by molecular beam epitaxy

  • Sadofev S
  • Blumstengel S
  • Cui J
 et al. 
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Abstract

Single-phase ZnCdO alloys with a band gap extending from the violet to yellow spectral range are fabricated by molecular beam epitaxy using extremely low growth temperatures in conjunction with O-rich growth conditions. The Cd concentration can be systematically adjusted via the Cd ∕ Zn beam pressure ratio. Despite growth temperatures as low as 150 ° C , layer-by-layer growth is accomplished allowing for the preparation of Zn Cd O ∕ Zn O quantum well structures. Both epilayers and quantum wells exhibit strong band-gap-related emission at room temperature in the whole composition range.

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Authors

  • S. Sadofev

  • S. Blumstengel

  • J. Cui

  • J. Puls

  • S. Rogaschewski

  • P. Schäfer

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