We report the synthesis, fabrication and extensive characterization of a visible-blind photodetector based on p-i-n junction GaN nanowire ensembles. The nanowires were grown by plasma-assisted molecular beam epitaxy on an n-doped Si(111) substrate, encapsulated into a spin-on-glass and processed using dry etching and metallization techniques. The detector presents a high peak responsivity of 0.47 A W-1 at -1 V. The spectral response of the detector is restricted to the UV range with a UV-to-visible rejection ratio of 2 x 102. The dependence on the incident power and the operation speed of the photodetector are discussed. © 2010 IOP Publishing Ltd.
CITATION STYLE
De Luna Bugallo, A., Tchernycheva, M., Jacopin, G., Rigutti, L., Henri Julien, F., Chou, S. T., … Tu, L. W. (2010). Visible-blind photodetector based on p-i-n junction GaN nanowire ensembles. Nanotechnology, 21(31). https://doi.org/10.1088/0957-4484/21/31/315201
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