Wafer-bonded single-crystal silicon slot waveguides and ring resonators

  • Briggs R
  • Shearn M
  • Scherer A
 et al. 
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Abstract

We fabricated horizontal Si slot waveguides with a 25 nm SiO 2 slot layer by bonding thin Si-on-insulator wafers. After removing the Si substrate and buried oxide from one side of the bonded structure, grating-coupled waveguides and ring resonators were partially etched into the Si / SiO 2 / Si device layers. The gratings exhibit efficiencies of up to 23% at 1550 nm and the ring resonators were measured to have loaded quality factors near 42   000 for the lowest-order transverse-electric mode, corresponding to a propagation loss of 15 dB/cm. The leaky lowest-order transverse-magnetic mode was also observed with a propagation loss of 44 dB/cm.

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Authors

  • Ryan M. Briggs

  • Michael Shearn

  • Axel Scherer

  • Harry A. Atwater

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