A 0 . 039um 2 High Performance eDRAM Cell based on 32nm High-K / Metal SOI Technology

by N Butt, K Mcstay, A Cestero, H Ho, W Kong, S Fang, R Krishnan, B Khan, A Tessier, W Davies, Y Zhang, J Johnson, S Rombawa, R Takalkar, A Blauberg, K V Hawkins, J Liu, S Rosenblatt, P Goyal, S Gupta, J Ervin, Z Li, S Galis, J Barth, M Yin T Weaver, J H Li, S Narasimha, W K Henson, N Robson, T Kirihata, M Chudzik, E Maciejewski, P Agnello, S Stiffler, S S Iyer, Hopewell Junction show all authors
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