We demonstrate experimental data to elucidate the reason for the discrepancies of reported band gap energy (Eg) of Cu 2ZnSnSe4 (CZTSe) thin films, i.e., 1.0 or 1.5 eV. E g of the co-evaporated CZTSe film synthesized at substrate temperature (Tsub) of 370 °C, which was apparently phase pure CZTSe confirmed by X-ray diffraction (XRD) and Raman spectroscopy, is found to be around 1 eV regardless of the measurement techniques. However, depth profile of the same sample reveals the formation of ZnSe at CZTSe/Mo interface. On the other hand, Eg of the co-evaporated films increases with T sub due to the ZnSe formation, from which we suggest that the existence of ZnSe, which is hardly distinguishable from CZTSe by XRD, is the possible reason for the over-estimation of overall Eg. © 2010 IEEE.
CITATION STYLE
Ahn, S. J., Jung, S., Gwak, J., Cho, A., Shin, K., Yoon, K., & Yun, J. H. (2010). Band gap determination of Cu2ZnSnSe4 thin films. In Conference Record of the IEEE Photovoltaic Specialists Conference (pp. 1894–1896). https://doi.org/10.1109/PVSC.2010.5616301
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