Equilibrium controlled static C-V measurement

Abstract

A new static C-V method is presented which explicitly controls the state of equilibrium in a device under test throughout the sweep. This guarantees reliable results, especially when high-quality devices with extremely low minority carrier generation rates are investigated. Detailed analysis of the transient displacement charge at the gate, following small bias steps, allows the evaluation of the I-V-characteristics of the induced junction diode between interface and substrate. Experiment examples illustrate certain dynamic effects due to the nonideal sweep rate of conventional C-V-techniques which may lead to erroneous conclusions. © 1991.