We investigate rf transport through an AlGaAs/GaAs single-electron transistor (SET). The presented rf-SET scheme provides a transmission coefficient proportional to the admittance of the device, which is desirable for impedance analysis as well as for high-sensitivity charge detection. The impedance of a SET, including the small tunneling capacitance, is successfully analyzed at the high frequency of 643 MHz, and is compared with a simple model. The ability to measure the impedance of a SET would expand the measurable regime of single-electron tunneling behavior. © 2002 American Institute of Physics.
CITATION STYLE
Cheong, H. D., Fujisawa, T., Hayashi, T., Hirayama, Y., & Jeong, Y. H. (2002). Impedance analysis of a radio-frequency single-electron transistor. Applied Physics Letters, 81(17), 3257–3259. https://doi.org/10.1063/1.1515883
Mendeley helps you to discover research relevant for your work.