Strong Franz-Keldysh oscillations were observed in the nonlinear reflection spectra of heterostructures with InP self-assembled quantum dots. These oscillations manifest a built-in electric field of about 30 kV/cm. We propose that this field originates from electric charge captured by the intrinsic defects on the dot interface. The presence of acceptor-like intrinsic defect states is found to be a general feature of the InP/InGaP interface but was not observed in other structures with quantum dots such as InAs/GaAs. © 1999 American Institute of Physics.
CITATION STYLE
Davydov, V., Ignatiev, I., Ren, H. W., Sugou, S., & Masumoto, Y. (1999). Observation of built-in electric field in InP self-assembled quantum dot systems. Applied Physics Letters, 74(20), 3002–3004. https://doi.org/10.1063/1.123993
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