Skip to content

Recombination processes in semiconductors

by P. Aigrain
Il Nuovo Cimento Series 10 ()
Get full text at journal

Abstract

Recombination of electrons and holes may take place in the host crystal or at impurity centres, the energy being removed by radiation of a light quantum, by multiphonon emission, or by an Auger process. The probabilities for each of these six processes are discussed. While the lifetime in semiconductors is usually determined by multiphonon recombination at impurity centres, Auger recombination in the host crystal can be expected to dominate in small-band-gap crystals containing large concentrations of free carriers. Radiative recombination in the host crystal may limit the lifetime in semiconductors where band-to-band transitions are direct, provided that the specimens are reasonably free of recombination centres.

Cite this document (BETA)

Readership Statistics

32 Readers on Mendeley
by Discipline
 
41% Physics and Astronomy
 
34% Engineering
 
16% Materials Science
by Academic Status
 
53% Student > Ph. D. Student
 
22% Researcher
 
19% Student > Master
by Country
 
3% India
 
3% Germany
 
3% France

Sign up today - FREE

Mendeley saves you time finding and organizing research. Learn more

  • All your research in one place
  • Add and import papers easily
  • Access it anywhere, anytime

Start using Mendeley in seconds!

Sign up & Download

Already have an account? Sign in