A 4Mb conductive-bridge resistive memory with 2.3GB/s read-throughput and 216MB/s program-throughput

Abstract

The growing demand for higher performance in the storage and access of data in various consumer electronic and computing devices has driven the development of nonvolatile memory (NVM) technologies. The promising candidates for future NVM such as FeRAM and PCM have demonstrated shorter access time, faster programming and wide read/write bandwidth in the chip and the memory macro [1-2]. Resistive memory (ReRAM) is also one of alternative NVMs, because of its low operating voltage, high speed and good scalability. Several types of ReRAM characteristics have been investigated on memory array [3-6]. However, most are limited in terms of memory array performance because of not having suitable read/write circuit for ReRAM. In this work, we present a 4Mb conductive bridge ReRAM test macro realizing 2.3GB/s read-throughput, 216MB/s program-throughput and robust reliability results by using read/write fully functional device technology with direct sense in programming (DSIP) method. © 2011 IEEE.