Deposition of epitaxial Ti2AlC thin films by pulsed cathodic arc

Abstract

A multicathode high current pulsed cathodic arc has been used to deposit Ti2 AlC thin films belonging to the group of nanolaminate ternary compounds of composition Mn+1 AXn. The required stoichiometry was achieved by means of alternating plasma pulses from three independent cathodes. We present x-ray diffraction and transmission electron microscopy analysis showing that epitaxial single phase growth of Ti2 AlC has been achieved at a substrate temperature of 900 °C. Our results demonstrate a powerful method for MAX phase synthesis, allowing for phase tuning within the Mn+1 AXn system. © 2007 American Institute of Physics.