Abstract
This paper presents detailed procedure of genetic neural networks modeling and application of this approach on GaN high electron mobility transistors (HEMTs). The developed model has been validated by RF large-signal measurements of the considered devices. The model shows very good capability for simulating the nonlinear behavior of the devices with higher rate of convergence. © 2012 Springer-Verlag.
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CITATION STYLE
Jarndal, A. (2012). Application of genetic neural networks for modeling of active devices. In Lecture Notes in Computer Science (including subseries Lecture Notes in Artificial Intelligence and Lecture Notes in Bioinformatics) (Vol. 7666 LNCS, pp. 231–239). https://doi.org/10.1007/978-3-642-34478-7_29
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