Resulting Effect of the p-Type of ZnTe: Cu Thin Films of the Intermediate Layer in Heterojunction Solar Cells: Structural, Optical, and Electrical Characteristics

Abstract

The microstructural, electrical, and optical properties of Cu-doped and undoped ZnTe thin films grown on glass substrates are covered in this article. To determine the chemical makeup of these materials, both energy-dispersive X-ray (EDAX) spectroscopy and X-ray photoelectron spectroscopy were employed. The cubic zinc-blende crystal structure of ZnTe and Cu-doped ZnTe films was discovered using X-ray diffraction crystallography. According to these microstructural studies, the average crystallite size increased as the amount of Cu doping increased, whereas the microstrain decreased as the crystallinity increased; hence, defects were minimized. The Swanepoel method was used to compute the refractive index, and it was found that the refractive index rises as the Cu doping levels rises. The optical band gap energy was observed to decrease from 2.225 eV to 1.941 eV as the Cu content rose from 0% to 8%, and then slightly increase to 1.965 eV at a Cu concentration of 10%. The Burstein–Moss effect may be connected to this observation. The larger grain size, which lessens the dispersion of the grain boundary, was thought to be the cause of the observed increase in the dc electrical conductivity with an increase in Cu doping. In structured undoped and Cu-doped ZnTe films, there were two carrier transport conduction mechanisms that could be seen. According to the Hall Effect measurements, all the grown films exhibited a p-type conduction behavior. In addition, the findings demonstrated that as the Cu doping level rises, the carrier concentration and the Hall mobility similarly rise, reaching an ideal Cu concentration of 8 at.%, which is due to the fact that the grain size decreases grain boundary scattering. Furthermore, we examined the impact of the ZnTe and ZnTe:Cu (at Cu 8 at.%) layers on the efficiency of the CdS/CdTe solar cells.