Investigation of carrier scattering mechanisms in molybdenum diselenide single crystals by hall effect measurements

Abstract

Molybdenum diselenide (MoSe2) belongs to the large family of layered transition metal dichalcogenides. It consists of weakly coupled sandwiched layers i.e. Se - Mo - Se in which a Mo atom layer is enclosed within two Se layers. This structure makes MoSe2 extremely anisotropic in character and leads to unusual structural properties. In addition, MoSe 2 possess flexible nature along with good carrier mobility to make them potential candidate for fabricating flexible high mobility electronic devices such as Schottky barrier devices, FETs, solar cell etc. In context of this authors made an effort to study the low temperature (12 K < T < 300 K) electronic transport properties of Molybdenum diselenide. Through the investigation the temperature dependent Hall mobility study revealed that the grown crystals of MoSe2 possess a mixed scattering mechanism. It has been found that observed temperature dependant mobility has at least two transitions from lattice to impurity scatterings showing an imprint of multicarrier nature of this semiconductor originating from its complex band structure. It has been observed that the studied crystals have at least two group of carriers of differing origins in which transition between dominant scattering mechanisms occur at different temperatures. Copyright © 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.